Title:
ワイドバンドギャップ結晶を昇華再結晶するための炉
Document Type and Number:
Japanese Patent JP6845798
Kind Code:
B2
Abstract:
An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0.
Inventors:
Mark Loboda
Application Number:
JP2017541371A
Publication Date:
March 24, 2021
Filing Date:
January 29, 2016
Export Citation:
Assignee:
S.K. Schiltron C.S.S.S.L.L.C.
International Classes:
C30B29/36; C30B23/06; F27B14/14; F27B14/20; F27D11/06
Domestic Patent References:
| JP2013075793A | ||||
| JP2013075771A | ||||
| JP2012193055A |
Attorney, Agent or Firm:
Shigeki Yamakawa