Title:
GALLIUM OXIDE CRYSTAL MANUFACTURING APPARATUS
Document Type and Number:
Japanese Patent JP2021134140
Kind Code:
A
Abstract:
To provide a gallium oxide crystal manufacturing apparatus capable of growing a crystal by the vertical Bridgman method and obtaining a large sized gallium oxide single crystal having less crystal defects served as the deterioration factor of crystal quality.SOLUTION: A gallium oxide crystal manufacturing apparatus 1 comprises: a crucible 20 for storing a raw material for gallium oxide ; a crucible support 21 for supporting the crucible 20 from below; a crucible support shaft 22 connected to the crucible support 21 from below and movably supporting the crucible 20 and the crucible support 21 in the vertical direction; a tubular furnace core tube 10 surrounding the crucible 20, the crucible support 21 and the crucible support shaft 22; a tubular furnace inner tube 11 surrounding the furnace core tube 10; and a resistance heating heater element 23 having an exothermic part 231 installed in a space between the furnace core tube 10 and the furnace inner tube 11. The melting points of the furnace core tube 10 and the furnace inner tube 11 is 1900°C or more; and the thermal conductivity of the furnace core tube 10 in a portion positioned just beside the crucible 20 is higher than that of the furnace inner tube 11.SELECTED DRAWING: Figure 1
More Like This:
Inventors:
HOSHIKAWA KEIGO
KOBAYASHI TAKUMI
OTSUKA YOSHIO
TAISHI TOSHINORI
KOBAYASHI TAKUMI
OTSUKA YOSHIO
TAISHI TOSHINORI
Application Number:
JP2021031374A
Publication Date:
September 13, 2021
Filing Date:
March 01, 2021
Export Citation:
Assignee:
FUJIKOSHI MACHINERY CORP
UNIV SHINSHU
NOVEL CRYSTAL TECH INC
UNIV SHINSHU
NOVEL CRYSTAL TECH INC
International Classes:
C30B11/00; C30B29/16; F27B14/06; F27B14/10; F27B14/14; F27D11/02
Attorney, Agent or Firm:
Hirata International Patent Office