Title:
GAP BASED LIGHT EMITTING ELEMENT SUBSTRATE AND PRODUCTION THEREOF
Document Type and Number:
Japanese Patent JP2701113
Kind Code:
B2
Abstract:
PURPOSE: To realize a GaP based light emitting element substrate for fabricating a LED having high luminance by specifying the concentration of carbon in an n-type GaP single crystal substrate.
CONSTITUTION: Transparent B2O3 17 lighter than GaP solution 13 covers the liquid level of the GaP solution 13 while a pressure vessel 10 for preventing dissociation of GaP is filled with pressurized inert gas such as nitrogen 16 and a GaP single crystal 14 grows while being lifted by means of a rotating shaft 15. The GaP single crystal 14 is sliced to produce a GaP single crystal substrate 1 on which various layers are eventually grown through liquid phase epitaxy. N-type dopant such as S is added when an n-type GaP layer 2 is grown whereas Zn and O are added to Ga solution when p-type GaP layer 3 is grown. Consequently, concentration of carbon in the GaP single crystal substrate 1 can be set at 1.0×1017/cc or below and a LED having high luminance can be realized through the use of a LED substrate including the GaP single crystal substrate 1.
Inventors:
Yanagisawa Munehisa
Higuchi
Tamura Yuki
Norio Otaki
Nakamura Akio
Higuchi
Tamura Yuki
Norio Otaki
Nakamura Akio
Application Number:
JP22532492A
Publication Date:
January 21, 1998
Filing Date:
July 31, 1992
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B27/02; C30B29/40; H01L21/208; H01L33/30; H01L33/56; H01L33/62; (IPC1-7): H01L33/00; C30B27/02; C30B29/40; H01L21/208
Other References:
APPLIED PHYSICS LETTER 44-1=1984
APPLIED PHYSICS LETTER 58-17=1991
APPLIED PHYSICS LETTER 58-17=1991
Attorney, Agent or Firm:
High Toshihiko No
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