Title:
GATE DRIVE CIRCUIT FOR VOLTAGE DRIVE ELEMENT
Document Type and Number:
Japanese Patent JP3558324
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a gate drive circuit which reduces a loss generated at a time when a short-circuit current is cut off.
SOLUTION: When a circuit detects that a short-circuit current Ic flows to a voltage drive element such as an insulated-gate bipolar transistor(IGBT) or the like, a transistor TR4 which is shown in (a) is turned on. Thereby, as shown in (b), the gate-emitter voltage VGE of the IGBT is lowered down to the Zener voltage of a Zener diode ZD10. As a result, the short-circuit current Ic is reduced, and the burden of the IGBT is reduced at the initial stage of a short circuit.
More Like This:
| JPH0433566 | DC/DC CONVERTER |
| WO/2020/020974 | VEHICLE-SIDE CHARGING CIRCUIT |
| JPH07107751 | INVERTER CIRCUIT |
Inventors:
Yasushi Abe
Kiyoaki Sasakawa
Kiyoaki Sasakawa
Application Number:
JP31924297A
Publication Date:
August 25, 2004
Filing Date:
November 20, 1997
Export Citation:
Assignee:
Fuji Electric Systems Co., Ltd.
International Classes:
H02M1/00; H02M1/08; H02M7/48; H02M7/483; H02M7/537; (IPC1-7): H02M1/00; H02M1/08; H02M7/48; H02M7/537
Domestic Patent References:
| JP7298623A | ||||
| JP7143734A | ||||
| JP6152353A | ||||
| JP5161342A |
Attorney, Agent or Firm:
Iwao Yamaguchi
Yoshihide Komada
Kiyoshi Matsuzaki
Yoshihide Komada
Kiyoshi Matsuzaki