Title:
GROWING METHOD FOR COMPOUND SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JPH06163416
Kind Code:
A
Abstract:
PURPOSE: To provide a compound semiconductor crystal growth method with which a compound semiconductor crystal, which was grown at different growth temperature before, can be grown at the same growth temperature.
CONSTITUTION: A substance which is formed by the decomposition of gaseous raw material, other than the element which constitutes a compound semiconductor to be formed, is formed and suppression gas, which suppress formation of the above-mentioned element in vapor phase in a reaction furnace, is introduced into the reaction furnace together with gaseous raw material.
Inventors:
OTSUKA NOBUYUKI
Application Number:
JP31671192A
Publication Date:
June 10, 1994
Filing Date:
November 26, 1992
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Kitano Yoshito
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