Title:
加熱処理装置及び加熱処理方法
Document Type and Number:
Japanese Patent JP6925213
Kind Code:
B2
Abstract:
A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.
Inventors:
Hideaki Iwasaka
Mizunaga Koichi
Takahiro Hayashida
Mizunaga Koichi
Takahiro Hayashida
Application Number:
JP2017182138A
Publication Date:
August 25, 2021
Filing Date:
September 22, 2017
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/027; F27B17/00; F27D7/06
Domestic Patent References:
| JP9326341A | ||||
| JP2016115919A | ||||
| JP2001237155A | ||||
| JP11204428A |
Attorney, Agent or Firm:
Tetsuo Kanamoto
Koji Hagiwara
Naoki Ogita
Koji Hagiwara
Naoki Ogita