To provide heat treatment equipment which heats the outer part of a testpiece by high-frequency induction heating while heating an inner part thereof by an infrared lamp, and can rapidly heat up an SiC substrate having a diameter of some inches or above to a high temperature as high as 1,200°C or above, while keeping the temperature evenly distributed in a plane by covering a testpiece and a testpiece stand with a shielding plate.
The testpiece 12 is placed on the conductive testpiece stand 10 installed in a vacuum chamber 4 which can apply heat treatment in a vacuum or in various gas atmospheres. A high-frequency coil 7 is installed around the testpiece stand 10, and an infrared generator composed of an infrared lamp 1 and a rotary elliptical reflection mirror 2 is installed at one end side of an infrared introduction quartz pillar 3. On the upper side and/or lower side of the test piece 12, one or a plurality of such infrared introduction quartz pillars 3 are arranged. Inside the high-frequency coil 7, double quartz tubes 6 are installed, and cooling water can be caused to flow between the double quartz tubes 6. By allowing the cooling water to flow outside the infrared lamp 1 or by cooling the infrared lamp 1 by air cooling, heating by the infrared lamp 1 can be prevented.
SENZAKI SUMIHISA
NISHIZAWA SHINICHI
ENDO TOMOYOSHI
YASHIMA TERUYUKI
THERMO RIKO KK
NIPPON THERMONICS CO LTD
| JPS61211978A | 1986-09-20 | |||
| JPH01184981A | 1989-07-24 | |||
| JP2003077855A | 2003-03-14 | |||
| JP2003323971A | 2003-11-14 | |||
| JP2001015248A | 2001-01-19 | |||
| JPH09245957A | 1997-09-19 | |||
| JP2002151427A | 2002-05-24 | |||
| JPH11214323A | 1999-08-06 | |||
| JP2003077857A | 2003-03-14 |
Hirayama Sukou
Keiji Nakano