Title:
HIGH MOLECULAR PHOTORESIST MATERIAL AND PHOTOLITHOGRAPHIC METHOD
Document Type and Number:
Japanese Patent JPH055994
Kind Code:
A
Abstract:
PURPOSE: To obtain a self-developable photoresist material capable of exposure with light in a deep UV region of ≤300nm or electron beams and having high resolution of $1μm, preferably ≤0.57μm and to provide a photolithographic method.
CONSTITUTION: This high molecular photoresist material has a principal chain represented by the formula, wherein X is C, O or S, Y is C, when X is not S, Y is S or S=O, and R is H, alkyl or aryl. When an optically transparent coating film is formed using this material and irradiated with deep UV or corresponding electron beams, it is disintegrated in a quantum yield of about ≤1.
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Inventors:
TOOMASU EMU RESURII
Application Number:
JP22280191A
Publication Date:
January 14, 1993
Filing Date:
September 03, 1991
Export Citation:
Assignee:
TOOMASU EMU RESURII
International Classes:
G03F7/039; H01L21/027; (IPC1-7): G03F7/039; H01L21/027
Attorney, Agent or Firm:
Hirose Shoichi
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