Title:
HOT ELECTRON TRANSISTOR
Document Type and Number:
Japanese Patent JPS61224455
Kind Code:
A
Abstract:
PURPOSE: To simplify the manufacturing by causing the Schottky junctions between themetal layers and the semiconductor layer to serve as barriers,
CONSTITUTION: Crystal layes are laminated on a crystal substrate 26 in the order as shown in the figure by, e.g., the molecular beam epitaxial growth,.
Inventors:
NAKAMURA TOSHIHIRO
Application Number:
JP6564485A
Publication Date:
October 06, 1986
Filing Date:
March 29, 1985
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/205; H01L29/267; H01L29/68; H01L29/76; (IPC1-7): H01L29/20; H01L29/68
Domestic Patent References:
| JP35018077A | ||||
| JP40004181A |
Attorney, Agent or Firm:
Sadaichi Igita
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