Title:
METHOD OF FORMING SCHOTTKY ELECTRODE
Document Type and Number:
Japanese Patent JPS61224454
Kind Code:
A
Abstract:
PURPOSE: To form a Schottky electrode having good Schottky junction characteristics by exposing a predetermined region for Schottky formation
CONSTITUTION: After forming an n-type active layer 2 on an InP substrate 1, a source electrode 3 and a drain electrode 4 are formed via ohmic contact,.
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Inventors:
YAMAGISHI HARUO
Application Number:
JP6384385A
Publication Date:
October 06, 1986
Filing Date:
March 29, 1985
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L29/812; H01L21/338; H01L29/417; H01L29/47; H01L29/872; (IPC1-7): H01L29/80; H01L29/91
Attorney, Agent or Firm:
Noriyuki Noriyuki