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Title:
リアクタ内でプラチナエッチングを行う方法
Document Type and Number:
Japanese Patent JP5054874
Kind Code:
B2
Abstract:
A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flaking and/or delaminating of such materials which can interfere with semiconductor wafer processing.

Inventors:
Deoneras stephen pee
Jard Leslie Gee
Olson Cart A
Application Number:
JP2001542603A
Publication Date:
October 24, 2012
Filing Date:
November 21, 2000
Export Citation:
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Assignee:
Teagal Corporation
International Classes:
C23C16/46; H01L21/3065; C23C16/44; C23C16/509; H01J37/32; H01L21/00
Domestic Patent References:
JP9162170A
JP2267289A
JP4316327A
Attorney, Agent or Firm:
Minoru Nakamura
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Hideto Takeuchi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda



 
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