Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE PROVIDED WITH POLISHING PROCESS
Document Type and Number:
Japanese Patent JP3163719
Kind Code:
B2
Abstract:
PURPOSE: To obtain a manufacturing means of a semiconductor device wherein flattening can be attained without leaving buried material on every recessed region, and recessed part filling excellent in flatness can be realized.
CONSTITUTION: The manufacturing method of a semiconductor device consists of a forming process of a liquid phase CVD film 6 wherein the liquid phase CVD film is formed after a recessed part filling process, and a polishing process. After a process for forming the liquid phase CVD film 6, the liquid phase CVD film 6 in the region except a wide recessed part 41 to be filled is eliminated, the liquid phase CVD film 61 on the recessed part is left, buried material 5 is eliminated by using the liquid phase CVD film 61 as a mask, and then the polishing process is performed.
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Inventors:
Tetsuo Goujo
Application Number:
JP4012592A
Publication Date:
May 08, 2001
Filing Date:
January 30, 1992
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/304; H01L21/76; (IPC1-7): H01L21/76
Domestic Patent References:
| JP217637A | ||||
| JP3148155A | ||||
| JP6050939A | ||||
| JP2277238A | ||||
| JP62145840A |
Attorney, Agent or Firm:
Toru Takatsuki