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Patent Searching and Data


Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0774244
Kind Code:
A
Abstract:

PURPOSE: To enhance step coverage at each contact hole while realizing fine patterning and high integration by forming a round shape corresponding to the depth of a contact hole above each contact hole without effecting round etching.

CONSTITUTION: A first insulation film 5 applicable to reflow is formed thick on an underlying layer having level difference and a second insulation film applicable to reflow is formed relatively thin thereon. The second insulation film 6 is then etched back and contact holes 9A, 9B are made through an interlayer insulation film comprising the first and second insulation films 5, 6. Subsequently, the second insulation film 6 is reflow-processed through heat treatment thus forming a round shape corresponding to the depth of contact hole at the opening of contact hole.


Inventors:
FUJISHIMA MASAAKI
Application Number:
JP16300993A
Publication Date:
March 17, 1995
Filing Date:
June 30, 1993
Export Citation:
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Assignee:
KAWASAKI STEEL CO
International Classes:
H01L21/3213; H01L21/768; H01L23/522; (IPC1-7): H01L21/768; H01L21/3213
Attorney, Agent or Firm:
Tetsuya Mori (2 others)