Title:
【発明の名称】シリコンウエハのラッピング後洗浄法
Document Type and Number:
Japanese Patent JP2002509355
Kind Code:
A
Abstract:
A process for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been lapped. The process comprises contacting the wafer with an oxidizing agent to oxidize organic contaminants which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising citric acid into which sonic energy is being directed to remove metallic contaminants which may be present on the surface of the wafer. After being immersed in the citric acid bath, the wafer is contacted with hydrofluoric acid to remove a layer of silicon dioxide which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising an alkaline component and a surfactant, and into which sonic energy is being directed.
Inventors:
Jin Chai
Henry F. Ark
Judith A. Schmidt
Thomas E Dawn
Henry F. Ark
Judith A. Schmidt
Thomas E Dawn
Application Number:
JP2000539523A
Publication Date:
March 26, 2002
Filing Date:
December 01, 1998
Export Citation:
Assignee:
MEMC ELECTRONIC MATERIALS,INCORPORATED
International Classes:
B08B3/08; B08B3/12; H01L21/00; H01L21/304; H01L21/306; (IPC1-7): H01L21/306; H01L21/304
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)