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Patent Searching and Data


Title:
FIELD-EFFECT TRANSISTOR
Document Type and Number:
Japanese Patent JPH0722670
Kind Code:
A
Abstract:

PURPOSE: To raise conductivity of an electrode and to realize high response of a gate voltage by forming at least one element of a semiconductor layer, a source electrode, a drain electrode and a gate electrode of a conjugate high polymer having a repetition unit expressed by a specified formula.

CONSTITUTION: At least one element of a semiconductor layer 2, a source electrode 3, a drain electrode 4 and a gate electrode 5 is formed of a conjugate high polymer having a repetition unit expressed by a formula I. In the formula, Ar1 and Ar2 is a conjugate aromatic ring which can have a substituent group or a conjugate complex ring which can have a substituent group. They can be different by (m) and (p), (m) is an integer of 1 or more, (n) is 0 or 1, (p) is 0 or an integer of 1 or more and (q) is an integer of 2 or more. When (n) is 1, (p) is an integer of 1 or more. Since an azo group is provided to a principal chain and an entire of the principal chain is π electron conjugate, it is possible to improve semiconductor property to raise conductivity of an electrode and to realize high response by a gate voltage.


Inventors:
YOKOMICHI TAISUKE
Application Number:
JP19284193A
Publication Date:
January 24, 1995
Filing Date:
July 06, 1993
Export Citation:
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Assignee:
OSAKA GAS CO LTD
International Classes:
C08G73/00; H01L21/28; H01L29/43; H01L29/78; H01L29/786; H01L51/00; H01L51/05; H01L51/30; (IPC1-7): H01L51/00; C08G73/00; H01L29/43; H01L29/786
Attorney, Agent or Firm:
Mitsuo Hokita (1 person outside)