Title:
【発明の名称】RF信号の直角変換のための厚膜構成物
Document Type and Number:
Japanese Patent JP3262173
Kind Code:
B2
Abstract:
A thick film construct and quadrature coupler for use in fabricating devices such as IQ modulators, IQ demodulators, vector modulators, image reject mixers, and multi-channel mixers. The thick film construct includes a dielectric substrate base with a metallized backside, a first metal trace deposited on the non-metallized side of the substrate base, a dielectric layer deposited over and around the first metal trace, and a second metal trace deposited on the dielectric layer. The first and second metal traces are aligned over their widths and lengths so to form a balanced transmission line structure where the first and second metal traces represent top and bottom lines in the balanced structure. This thick film structure serves as the foundation for microwave capacitors, mixers, and other transmission line based structures, including a quadrature coupler. The quadrature coupler which, in turn forms the basis for more complex devices, includes an input port, an isolated port, in-phase output port (I-port), and quadrature phase output port (Q-port).
Inventors:
Ralph, Loren, Yi.
Application Number:
JP51482298A
Publication Date:
March 04, 2002
Filing Date:
September 17, 1997
Export Citation:
Assignee:
RF Prime Corporation
International Classes:
H01F17/00; H01P1/203; H01P3/18; H01P3/08; H01P5/10; H01P5/12; H01P5/18; H03D9/06; H03D7/14; (IPC1-7): H01P3/08; H01P5/18; H03D9/06
Domestic Patent References:
| JP537213A | ||||
| JP3250902A | ||||
| JP7183708A | ||||
| JP6338341U | ||||
| JP4421141B1 |
Other References:
【文献】米国特許5534830(US,A)
Attorney, Agent or Firm:
Yasuo Ishikawa (1 outside)