Title:
集積リードオンリーメモリ、該リードオンリーメモリを動作させるための方法および製造方法
Document Type and Number:
Japanese Patent JP2005519472
Kind Code:
A
Abstract:
An integrated read-only memory having select transistors, each of which has a drain connection and an electrode connection for feeding an electrical signal such as a voltage or a current. A layer is provided between the drain connections and the electrode, whose electric resistance can be changed under the effect of a configuration voltage or current. The layer may be applied in a backend process.
Inventors:
Hoffman, Franz
Rieken, Richard Johannes
Shresh, Till
Rieken, Richard Johannes
Shresh, Till
Application Number:
JP2003573703A
Publication Date:
June 30, 2005
Filing Date:
February 17, 2003
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
H01L27/10; G11C8/02; G11C16/02; G11C16/10; H01L21/8247; H01L27/115; H01L27/24; H01L27/28; (IPC1-7): H01L27/10; H01L21/8247; H01L27/115
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Natsuki Morishita
Takaaki Yasumura
Natsuki Morishita