Title:
INTERNAL DISCHARGE CIRCUIT USING SEMICONDUCTOR SWITCH ELEMENT
Document Type and Number:
Japanese Patent JP3796710
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an internal discharge circuit using a semiconductor switch element capable of securing safeness of an electrical treatment device by an internal discharge capability even in a case where the semiconductor switch becomes uncontrollable for some reason or other.
SOLUTION: An internal discharge circuit 147 is composed of a transformer 103, its primary side area 101, its secondary side area 102, an internal discharge resistor 141 a semiconductor switch element 133, and in the secondary side area 102, a safety securing resistor 140 for automatically putting the semiconductor switch element 133 in an energized state is connected between the positive pole of an electrical energy accumulation section 142 and the gate of the semiconductor switch element 133 by accumulated electrical energy.
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Inventors:
Naoto Akiyama
Inomata Masahiko
Tsumura Ikuyo
Inomata Masahiko
Tsumura Ikuyo
Application Number:
JP2000143991A
Publication Date:
July 12, 2006
Filing Date:
May 16, 2000
Export Citation:
Assignee:
Nihon Kohden Co., Ltd.
International Classes:
H03K17/00; A61N1/39; H02M1/32; H03K17/56; H03K17/687; (IPC1-7): A61N1/39; //H02M1/00
Domestic Patent References:
| JP8205401A | ||||
| JP10509573A | ||||
| JP592046A | ||||
| JP6339535A | ||||
| JP738406A |
Attorney, Agent or Firm:
Teruo Naito
Noriaki Miyakoshi
Noriaki Miyakoshi
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