Title:
INTERPOSER FOR SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3796099
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an interposer for semiconductor devices that has improved absorption of noise, can be miniaturized, and can reduce manufacturing costs.
SOLUTION: An insulator 10 having a heat resistance property, a plurality of through holes 12 formed on the insulator 10, a wiring pattern 16 that is formed on the front and rear of the insulator being electrically connected through a conductor part 14 that is formed on the inner wall of a required number of through holes 12 out of the through holes 12, a first electrode part 18 that is formed on the front and rear of the insulator 10 being electrically connected via the conductor part 14 that is formed on the inner wall of the required number of through holes 12 out of the through holes 12, a dielectric layer 20 that is formed on the first electrode part 18, and a second electrode part 24 that is formed on the dielectric layer 20 are provided. Also, a required number of capacitors 28 consisting of the first electrode part 18, the dielectric layer 20, and the second electrode part 24 are formed.
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Inventors:
Naohiro Shino
Application Number:
JP2000140836A
Publication Date:
July 12, 2006
Filing Date:
May 12, 2000
Export Citation:
Assignee:
Shinko Electric Industry Co., Ltd.
International Classes:
H01L23/12; H01L21/48; H01L23/32; H01L23/498; H01L23/64; H05K1/16; H05K1/14; H05K3/42; (IPC1-7): H01L23/32; H01L23/12
Domestic Patent References:
| JP4051166U | ||||
| JP6302760A | ||||
| JP8222656A | ||||
| JP9213835A |
Attorney, Agent or Firm:
Takao Watanuki
Horimai Kazuharu
Horimai Kazuharu