PURPOSE: To improve an arithmetic function, stereoscopic memory function and energy conversion function, etc., by implanting ions to a base material, thereby varying output at different points in a material surface even if, for example, input is constant within the plane.

CONSTITUTION: Various ions are implanted to the base material consisting of org. and inorg. materials to arbitrarily control the electrical and optical properties of the base material (ions characteristic functional material) 1 implanted with the ions. Then, the increase of an electron transfer rate by the internal potential gradient of the ions is made possible by implanting various kinds of the ions into the base materials of the org. and inorg. compds. Consequently, the electric conductivity is greatly improved. Namely, electric characteristics are successively controllable to an insulator semiconductor and conductor and the control of optical characteristics is similarly possible. The implantation patterns of the ions are arbitrarily linear functionally, nonlinear functionally and step functionally controlled within the plane and within the section in such a manner, there by, the electrical and optical properties of the base material after the ion implantation are linear functionally, nonlinear functionally and step functionally controlled within the plane and within the section.