Title:
SUBSTRATE FOR LARGE-BORE GROUP III NITRIDE-BASED EPITAXIAL GROWTH, AND PRODUCTION METHOD THEREOF
Document Type and Number:
Japanese Patent JP2022012558
Kind Code:
A
Abstract:
To provide a substrate for group III nitride epitaxial growth capable of manufacturing inexpensively a single crystal of group III nitride in a high quality; and to provide a production method thereof.SOLUTION: A substrate for group III nitride-based epitaxial growth comprises a support substrate having a structure wrapped in a sealing layer in which a core comprising a nitride ceramic has a thickness of 0.05 μm or more and 1.5 μm or less, a flattening layer provided on an upper surface of the support substrate, and having a thickness of 0.5 μm or more and 3.0 μm or less, and a seed crystal layer of a single crystal provided on an upper surface of the flattening layer, including an uneven pattern on the surface, and having a thickness of 0.1 μm or more and 1.5 μm or less.SELECTED DRAWING: Figure 1
Inventors:
KUBOTA YOSHIHIRO
KAWAHARA MINORU
YAMADA MASATO
KAWAHARA MINORU
YAMADA MASATO
Application Number:
JP2020114475A
Publication Date:
January 17, 2022
Filing Date:
July 01, 2020
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
SHINETSU HANDOTAI KK
SHINETSU HANDOTAI KK
International Classes:
C30B29/38
Attorney, Agent or Firm:
Shigeki Orisaka
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