Title:
LATERAL PNP BIPOLAR TRANSISTOR AND MANUFACTURING FOR INSULATOR SEPARATION LATERAL BIPOLAR TRANSISTOR
Document Type and Number:
Japanese Patent JP3264401
Kind Code:
B2
Abstract:
PURPOSE: To provide a lateral pnp bipolar transistor and a manufacturing method for the insulator separation-type lateral bipolar transistor, which can improve an amplification factor without reducing productive yield.
CONSTITUTION: When a p-type deep diffusion collector layer 70 is formed at an island-shaped base region 100 with its bottom and side faces separated with an insulator, a p-type impurity, boron as an example, is diffused from the side of a trench (vertical groove) that is formed to separate the side face of the island-shaped base region 100. Then, a polysilicon region filled in the groove is formed just under a p+-type collector region. A p-type deep diffusion region around the trench is formed just under the p+-type collector region by diffusing an impurity from the trench.
Inventors:
Takayuki Sugisaka
Junji Hayakawa
Shoji Miura
Toshio Sakakibara
Makio Iida
Junji Hayakawa
Shoji Miura
Toshio Sakakibara
Makio Iida
Application Number:
JP28651593A
Publication Date:
March 11, 2002
Filing Date:
November 16, 1993
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L29/73; H01L21/331; H01L21/74; H01L21/762; H01L29/732; (IPC1-7): H01L21/331; H01L21/762; H01L29/73
Domestic Patent References:
| JP330450A |
Attorney, Agent or Firm:
Hiroshi Ohkawa