To provide a light-emitting device which is easy to produce and has high light extraction efficiency at the side surface of a light-emitting element.

A semiconductor light-emitting device 10 includes a light-emitting element 13 for emitting light and a substrate 11 having conductive layers 12a and 12b. The light-emitting element 13 is bonded to the conductive layer 12a by a bonding material 16 which transits from an uncured state to a cured state. Around a region 12c of the conductive layer 12a where the light-emitting element 13 is bonded, a recess 15 into which the bonding material 16, which has protruded in the uncured state from the region 12c at the time of bonding the light-emitting element 13, enters is provided.