Title:
液相エピタキシャル成長方法及び単結晶ＳｉＣの製造方法
Document Type and Number:
Japanese Patent JP6595897
Kind Code:
B2
Inventors:
Tori Satoshi
Application Number:
JP2015242938A
Publication Date:
October 23, 2019
Filing Date:
December 14, 2015
Export Citation:
Assignee:
Toyo Tanso Co., Ltd.
International Classes:
C30B29/36
Domestic Patent References:
| JP2011119412A | ||||
| JP2008037684A |
Attorney, Agent or Firm:
Naomi Katsura River