To provide a magnetic memory array that can be shielded from an unneeded stray magnetic field and provide stable writing and reading of magnetic information.

A plurality of auxiliary shield layers 31 that extends in the Y direction along a bit line group is each provided between a single main shield layer 21 and the bit line group and array blocks 12, for reducing fully the possibility that externally supplied weak stray magnetic fields, which have been impossible to be eliminated by the main shield layer 21, and a stray magnetic field attributed to the main shield layer 21 itself will be exerted on the array blocks 12. Furthermore, providing a couple of pads enhances the formation of a single magnetic domain in each of the auxiliary shielding layers 31, along the longitudinal direction (the Y direction) and prevents generation of unneeded magnetic stray fields caused by the auxiliary shield layers 31 themselves.