Title:
垂直磁気トンネル接合を含む磁気記憶素子
Document Type and Number:
Japanese Patent JP6999122
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a highly reliable magnetic memory device by improving, e.g., tunnel magnetoresistance (TMR) characteristics of a magnetic tunnel junction (MTJ).SOLUTION: A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer and containing cobalt, iron, and at least one of Group IV elements. The polarization enhancement layer has a magnetization direction perpendicular to a top surface of the substrate.SELECTED DRAWING: Figure 7
Inventors:
Money filling
Lee Toshiaki
Park Yongxing
Stewart SP Perkin
Lee Toshiaki
Park Yongxing
Stewart SP Perkin
Application Number:
JP2016206651A
Publication Date:
January 18, 2022
Filing Date:
October 21, 2016
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
INTERNATIONAL BUSINESS MACHINES CORPORATION
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L21/8239; G11C11/16; H01F10/16; H01F10/32; H01L27/105; H01L43/08; H01L43/10
Domestic Patent References:
| JP2011061204A | ||||
| JP2010238769A | ||||
| JP2008010590A |
Attorney, Agent or Firm:
Tatsuhiko Abe
Shinya Mihiro
Choe Yun
Shinya Mihiro
Choe Yun