Title:
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETORESISTIVE MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2022069247
Kind Code:
A
Abstract:
To provide a magnetic tunnel junction element that is usable even at operation temperatures over a wide range of -40 to +150°C, and has low electric power, high-speed inversion and high-reliability properties, and a magnetoresistive memory device.SOLUTION: A magnetic tunnel junction element 10 is formed by laminating a fixed layer 13 maintaining a predetermined magnetization direction, an insulation layer 14, a free layer 15 having a changeable magnetization direction, and an antiferromagnetic oxide layer 16 in order, and the free layer 15 and antiferromagnetic oxide layer 16 are in direct contact.SELECTED DRAWING: Figure 1
Inventors:
SONOBE YOSHIAKI
YANAGIHARA HIDETO
YANAGIHARA HIDETO
Application Number:
JP2020178331A
Publication Date:
May 11, 2022
Filing Date:
October 23, 2020
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L29/82; G11B5/39; G11C11/15; H01F10/32; H01L21/8239; H01L43/08
Attorney, Agent or Firm:
Ken Ieiri
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