Title:
MANUFACTURE OF ALIGNMENT MARKER FOR SEMICONDUCTOR OPTICAL ELEMENT MANUFACTURE AND MASK-ALIGNMENT METHOD
Document Type and Number:
Japanese Patent JP3315185
Kind Code:
B2
Abstract:
PURPOSE: To enable mask-alignment after a crystal growth process, by, in an alignment marker formation area, forming a pattern containing the configuration corresponding to that of the alignment marker as well as a stripe pattern, for the alignment marker to be formed with this pattern.
CONSTITUTION: After an insulation film 3 formed all over a wafer, it is coated with a resist 4. Then, using photolithography technique, the stripe pattern corresponding to a ridge is formed on a semiconductor laser formation area, an the pattern corresponding to the marker configuration on an alignment marker formation area. Then, with the resist pattern used as a mask, the insulation film 3 is etched. After that, the resist 4 is removed. Then, in parallel with ridge formation on a buried-ridge type semiconductor laser, the ridge containing alignment marker configuration is formed.
Inventors:
Yasuhiro Kunitsugu
Yutaka Nagai
Yutaka Nagai
Application Number:
JP6360693A
Publication Date:
August 19, 2002
Filing Date:
March 23, 1993
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
G03F9/00; H01L21/027; H01L21/68; H01S5/00; H01S5/30; (IPC1-7): H01L21/027; G03F9/00; H01L21/68; H01S5/30
Domestic Patent References:
| JP4119680A | ||||
| JP4929986A | ||||
| JP6380528A | ||||
| JP51147179A | ||||
| JP536584A | ||||
| JP6473718A | ||||
| JP60201628A | ||||
| JP62247527A |
Attorney, Agent or Firm:
Kenichi Hayase