PURPOSE: To alleviate the conditions of heat resistance imposed on an org. semiconductor by joining the substrate of a photosensitive body having conductive material on the surface part on the surface of a layer forming the lowest part of the photosensitive body with the conductive part opposite to said lowest layer.
CONSTITUTION: A surface protective layer 4 and an electrostatic charge generating layer 3 each made of amorphous silicon are formed on a film support 5 made of Al by the glow discharge method. A charge transfer layer 2 contg. an org. semiconductor made of triphenylstyrylpyrazoline having dimethylamino group is formed by coating the surface of the layer 3 with it in a thickness of 15μm and baking it in an atm. of N2 in a heat treating oven at 62°C for 1hr. The substrate 6 of the photosensitive body prepared by vapor depositing Al on the surface of a heat resistant polyimide resin is bonded to the surface of the layer 2 by using a conductive adhesive to join the Al-coated side of the substrate 6 with the layer 2, and drying them, thus permitting the org. semiconductor to be neither heated at high temp. nor exposed to discharged space, and therefore, restrictions so far imposed on the material of the org. semiconductive layer to be greatly alleviated.
KURAMOTO AKIMASA
TANAKA EIICHIRO
AKIYAMA KOJI
Next Patent: MANUFACTURE OF ELECTROPHOTOGRAPHIC SENSITIVE BODY