PURPOSE: To enable high speed film formation by incorporating a gaseous silicon compd. in at least one of gases to be introduced into a plasma forming chamber and a film forming chamber and forming a layer composed essentially of amorphous silicon on a substrate set in the film forming chamber.
CONSTITUTION: A gas mixture of argon and hydrogen is introduced through an inlet 2 into the plasma forming chamber 1 exhausted to vacuum, and microwaves of 2.45GHz are applied into there from a microwave oscillator 3, and a magnetic field is formed with a magnet 4. A gas mixture of silane and B2H6 is introduced from inlet 7 into the film forming chamber 6 and brought into contact with plasma coming from the chamber 1, resulting into decomposing the silane and B2H6 and depositing a P-type amorphous silicon hydride layer doped with B in a thickness of 0.1μm on the surface of a cylindrical aluminum substrate 8. Next, the feed of B2H6 into the chamber 6 is decreased to form an I-type amorphous silicon hydride layer in a thickness of 15W20μm, and finally, the feed of B2H6 is stopped and methane is additionally introduced into the chamber 1 to form a surface layer made of silicon carbide in a thickness of 0.1μm, thus the obtained electrophotographic sensitive body to be prepared at room temp. at high film-forming speed.
TANAKA EIICHIRO
AKIYAMA KOJI
TAKIMOTO AKIO
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