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Title:
MANUFACTURE OF FINE ISOMETRIC SILICON NITRIDE POWDER OF HIGH PURITY
Document Type and Number:
Japanese Patent JPS6042209
Kind Code:
A
Abstract:

PURPOSE: To manufacture property and advantageously fine isometric silicon nitride powder of high purity by grinding a substance contg. Si.N obtd. in a synthesizing stage with a grinding mechanism whose principal constituent component is a molded silicon nitride body, and treating the resulting powder under specified conditions.

CONSTITUTION: Silicon halide or silane represented by a formula SiHnX4-n (where X is F, Cl, Br or I, and (n) is an integer of 0W4) is reacted with a gaseous mixture of ammonia and/or nitrogen with hydrogen to obtain a mainly amorphous substance contg. Si.N. This substance is ground or crushed with a mechanical grinder having a grinding mechanism whose principal constituent component is a molded silicon nitride body. The resulting powder is heated at 1,000W1,700°C in an atmosphere contg. nitrogen, hydrogen, ammonia or a mixture thereof to manufacture fine isometric silicon nitride powder of high purity with superior characteristics at high temp.


Inventors:
SHIGI TADASUKE
HASEGAWA MASASHI
TANJI HIROAKI
HIYAMA SHIGEO
Application Number:
JP14670883A
Publication Date:
March 06, 1985
Filing Date:
August 12, 1983
Export Citation:
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Assignee:
KOGYO GIJUTSUIN
International Classes:
C01B21/068; (IPC1-7): C01B21/068
Domestic Patent References:
JPS5921506A1984-02-03