PURPOSE: To enable to manufacture a semiconductor device using an InAs having large electron mobility without alloy scattering as an operating layer by crystal growing GaSb in 2μm or more on a semi-insulating GaAs substrate, and growing a multilayer crystals of single or multilayers having equal lattice constant to that of the GaSb on the GaSb layer.

CONSTITUTION: GaAs 2 is grown in 2μm or more by a molecule beam epitaxial growing method on a semi-insulating GaAs substrate 1. Then, an AlSb layer 3 is grown in 0.5μm, an InAs layer 4 undoped with am impurity is grown in 1μm, an AlSb layer 3 is grown in 0.5μm, an InAs layer 4 undoped with an impurity is grown in 1μm, an AlSb layer 5 is grown in 0.5μm, and an Al film 6 is grown in 0.4μm on the GaSb 2. Then, the film 6 is removed by photoetching except one region 7, and a gate electrode 7 is formed. Then, two regions disposed at opposite side to the electrode 7 are etched until reaching the layer 4, and Au ohmic electrodes 8, 9 are eventually formed on the two regions.