Title:
MANUFACTURE OF MOS TRANSISTOR
Document Type and Number:
Japanese Patent JPH06295923
Kind Code:
A
Abstract:
PURPOSE: To provide a method of manufacturing a MOS transistor, which is capable of making the MOS transistor in a simple process and at the same time, providing the MOS transistor having a good performance.
CONSTITUTION: In a method of manufacturing a MOS transistor, which makes source and drain regions 61 and 62 form by an ion implantation method and an excimer laser annealing method, an auxiliary film 7 is formed in a constitution, wherein the reflectivity of a laser beam in the side-walls, which are located on the source and drain regions, of a gate electrode pattern is larger than that of the laser beam in the other parts of the pattern, and thereafter, the excimer laser annealing method is performed.
Inventors:
YASUSHIGE HIROAKI
Application Number:
JP9879093A
Publication Date:
October 21, 1994
Filing Date:
March 31, 1993
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/265; H01L21/268; H01L21/336; H01L29/78; (IPC1-7): H01L21/336; H01L21/265; H01L21/268; H01L29/784
Attorney, Agent or Firm:
Toru Takatsuki
Previous Patent: The lap end preparation method in a coma
Next Patent: MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE
Next Patent: MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE