Title:
MANUFACTURE OF POLYSILICON FILM
Document Type and Number:
Japanese Patent JP3533477
Kind Code:
B2
Abstract:
PURPOSE: To obtain crystal orientation excellent in regularity and enable high speed response, by a method wherein an amorphous silicon film is formed on crystal grains of polysilicon which crystal grains have specified crystal orientation on a substrate by etching a first polysilicon film, and a second silicon film is formed by heat-treating the amorphous silicon film.
CONSTITUTION: An a-Si:H film 12 is pulse-irradiated with Xecl excimer laser. Then the a-Si:H film 12 is changed into a first polysilicon film 13. Wet etching for leaving only crystal grains whose crystal orientation is [111] on a glass substrate 11 is performed. After that, an a-Si:H film as a second amorphous silicon film is deposited by using a plasma CVD method. The a-Si:H film is so patterned that only a TFT forming region is left.
Inventors:
Yamaguchi, Michiya
Application Number:
JP30267294A
Publication Date:
May 31, 2004
Filing Date:
November 14, 1994
Export Citation:
Assignee:
CASIO COMPUT CO LTD
International Classes:
H01L21/20; H01L21/02; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L21/20; H01L21/336; H01L27/12; H01L29/786
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