Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2719863
Kind Code:
B2
Abstract:
PURPOSE: To form metal silicide by the self-aligned manner by depositing an amorphous alloy layer between cobalt or nickel metal and a specific metal on a surface.
CONSTITUTION: A layer containing cobalt Co or nickel Ni is deposited on the surface of a semiconductor that is screened by silicon regions 3, 4, 5, and 6 and regions 8 and 9 of an insulation material. Then, a semiconductor substrate is heated, thus enabling cobalt Co or nickel Ni to form silicon 3, 4, 5, and 6 and metal silicide. A layer of an amorphous alloy with a metal selected from a group consisting of titanium Ti, zirconium Zr, tantalum Ta, molybdenum Mo, niobium Nb, hafnium Hf, and tungsten W is deposited on a surface as a layer 12 containing cobalt Co or nickel Ni. Further, temperature is adjusted to a heating treatment temperature so that the layer of amorphous alloy remains in amorphous state during heat treatment.
Inventors:
Johann Philippe William Duchatheau
Alec Harold Leader
Gerrit Jan van der Cork
Alec Harold Leader
Gerrit Jan van der Cork
Application Number:
JP6964592A
Publication Date:
February 25, 1998
Filing Date:
February 19, 1992
Export Citation:
Assignee:
Philips Electronics Nemrose Fennaught Shap
International Classes:
H01L21/28; H01L21/285; H01L21/336; H01L21/60; H01L21/768; H01L29/78; (IPC1-7): H01L21/28; H01L29/78
Domestic Patent References:
| JP2130830A |
Other References:
【文献】欧州特許出願公開349058(EP,A)
Attorney, Agent or Firm:
Masao Sawada
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