Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3796097
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve reliability and performance of a dynamic circuit and a device, having the circuit by forming island-like films containing specific metals on an amorphous silicon film and annealing the island-like films at a specific temperature.
SOLUTION: A base silicon oxide film 1B is formed on a substrate 1A by the plasma CVD method, and an amorphous silicon film 1 is formed on the film 1B by the CVD method. Then island-like films, dots, particles, clusters, lines, etc., containing nickel, iron, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, scandium, titanium, vanadium, chromium, manganese, copper, zinc, gold, and silver are formed on or under the film 1 and annealed for a period of time, which is shorter than the heat-treating period of ordinary amorphous silicon at a temperature lower than the crystallization temperature, which is set at the time of merely heat-treating ordinary amorphous silicon. Therefore, the crystallization started from two island-like nickel films, etc., come into collision and the crystallization ends by leaving nickel silicate 3A in the middle.
Inventors:
Hiroyuki Zhang
Application Number:
JP2000108110A
Publication Date:
July 12, 2006
Filing Date:
December 01, 1993
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L21/20; H01L29/786; H01L21/336
Domestic Patent References:
| JP2140915A | ||||
| JP4195123A | ||||
| JP4290467A | ||||
| JP45022173A |
Attorney, Agent or Firm:
Nobuyuki Watanabe