PURPOSE: To prevent the peel-off of films caused by strong tensile stress that tungsten has and increase the degree of integration and reliability of a semiconductor device and make it a multilayer one by forming a film which has compressive stress between an interlayer insulating film and tungsten.

CONSTITUTION: An interlayer insulating film 2 and then a silicon nitride film 8 which has compressive stress are so deposited as to cover a lower-layer interconnect 1 formed on a semiconductor substrate. Then, an adhesive layer 4 is formed on the silicon nitride film 8 and tungsten 5 is deposited on the adhesive layer 4. Since the silicon nitride film 8 and the tungsten 5 are tightly adhered to each other with the adhesive layer 4, the peel-off of films can be prevented at an interface between the two films. Due to this structure, strong tensile stress that the tungsten 5 has is offset with compressive stress of the silicon nitride film through the adhesive layer 4 and therefore stress accumulated in the inside of the structure of an integrated circuit is lessened and there is no peel-off of films. By this method, a semiconductor device can be highly integrated and multilayer one and the reliability of the device can also be increased.