PURPOSE: To improve the reliability of products by a method wherein after a pattern with protrusions is formed by photoresist coating on a substrate, the photoresist coating is removed and masks are provided on the protrusions in a later process for prevention against contamination of oxidation films and damage of a ZnS film.
CONSTITUTION: A pattern with protrusions 11 is formed on a substrate 1 using a photoresist coating as a mask, and the resist coating is removed by etching. Then, after formation of an anodic oxidation film and another photoresist coating 13 at the pattern with protrusions 11, the substrate is dipped into electrolyte for deep permeation to form anodic oxidation films 12A. Next, insulating films of ZnS 14 are formed after removal of the resists 13 on the pattern 11 and the anodic oxidation film. By this process, no contamination of the oxidation films can take place because the resist coatings have been removed when the anodic oxidation films 12A are formed. In addition, product reliability can be improved by forming masks on the protrusions of the pattern 11 when a metallic layer is formed for electrodes by preventing damage of the underside insulating film 14.
| JPH08124895 | WAFER ELECTROLYZER |
| JPH11288903 | EDGE MIRROR-POLISHING METHOD FOR SILICON WAFER |
TAKIGAWA HIROSHI
YOSHIKAWA MITSUO
ITOU MICHIHARU
HAMASHIMA SHIGEKI
