Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5835917
Kind Code:
A
Abstract:
PURPOSE:To obtain a substrate for semiconductor device having a favorable characteristic at a low temperature by a method wherein light is irradiated to the back of the semiconductor substrate having a polycrystalline or amorphous semiconductor layer on the surface interposing an insulating film between them heating the substrate, and a high energy beam is irradiated to the semiconductor layer on the surface at the same time to convert the layer thereof into a single crystal. CONSTITUTION:The polycrystalline or amorphous semiconductor layer is accumulated on the Si substrate interposing the SiO2film between them to form the Si substrate 10 having the insulatingly isolated non-single crystal semiconductor layer. Then the substrate 10 thereof is put in a quartz vessel 31, light 33 from a xenon lamp made power density thereof as 10<2>-10<4>W/cm<2> is irradiated for 10<-3>sec or more to the back thereof, namely to the back of the substrate, heating the substrate 10 at 300-1,000 deg.C, and at the same time, a high energy continuously oscillating laser light 32 of Ar, etc., made power density thereof as 10<4>W/cm<2> or more is irradiated for 10<-6>-10<-3>sec to the surface side of the layer on the surface. Accordingly the layer is converted into the signal crystal layer, and the semiconductor substrate having no contamination and moreover having uniform film quality is obtained.
Inventors:
AKIYAMA SHIGENOBU
KUGIMIYA KOUICHI
FUSE HARUHIDE
KUGIMIYA KOUICHI
FUSE HARUHIDE
Application Number:
JP13572281A
Publication Date:
March 02, 1983
Filing Date:
August 28, 1981
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/20; (IPC1-7): H01L21/263; H01L21/84
Domestic Patent References:
| JP50147558B |
Attorney, Agent or Firm:
Toshio Nakao