Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6159737
Kind Code:
A
Abstract:
PURPOSE:To realize low temperature heat processing and improve reliability of product through selective local heating of film by irradiation of light having particular wavelength which is selectively absorbed for coupling of film forming material. CONSTITUTION:As an insulation film, surface protection film of a semiconductor device, for example, a phosphor added silicon oxide film (hereinafter referred to as PSG film) is formed. Next, an energy is selectively absorbed in the surrounding of the P-O coupling with disassembling and recoupling of P-O coupling when the PSG film is irradiated with the light of the wavelength having the energy which is equal to the coupling energy of P-O coupling. Therefore, energy absorption occurs at the surface PSG film and only the surface layer is locally heated, resulting in the effect similar to the high temperature processing as the surface. According to this method, low temperature heat processing is realized and reliability of product can also be enhanced.
Inventors:
SATOU KUNIYA
Application Number:
JP18095284A
Publication Date:
March 27, 1986
Filing Date:
August 30, 1984
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/31; H01L21/20; H01L21/324; (IPC1-7): H01L21/20; H01L21/31
Domestic Patent References:
| JPS497388A | 1974-01-23 |
Attorney, Agent or Firm:
Uchihara Shin