Title:
MANUFACTURE OF SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JPH04287367
Kind Code:
A
Abstract:
PURPOSE: To manufacture a semiconductor memory having high level of integration and high operation speed.
CONSTITUTION: In order to form a P+ type diffusion layer 15 as a channel stopper, BF2+ ions 25 are implanted in a.peripheral circuit part 24 before an Sio2 film 12 as a field oxide film 12 is formed, and B+ ions 14 are implanted in a memory cell part 22 after the SiO2 film 12 is formed. Hence the BF2+ ions 25 are not implanted in the vicinity of the surface of an active region 16 in the peripheral circuit part 24, and the B+ ions 14 are not stretched on the surface of the active region 16 in the vicinity of a bird's beak 12a of the SiO2 film 12.
Inventors:
ITO MASAHIKO
Application Number:
JP7585691A
Publication Date:
October 12, 1992
Filing Date:
March 15, 1991
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/74; H01L21/265; H01L21/76; H01L21/8244; H01L27/08; H01L27/10; H01L27/108; H01L27/11; (IPC1-7): H01L21/265; H01L21/74; H01L21/76; H01L27/08; H01L27/108; H01L27/11
Attorney, Agent or Firm:
Tsuchiya Masaru