MANUFACTURE OF SI SEMICONDUCTOR ELEMENT - Ergi Semicon Company Limited

Title:

MANUFACTURE OF SI SEMICONDUCTOR ELEMENT

Document Type and Number:

Japanese Patent JP3589473

Kind Code:

B2

Abstract:

PURPOSE: To reduce the heavy metal accumulated on an Si-SiO2 interface region by a method wherein a gettering side is formed by ion-implanting carbon into the element isolation region of an Si substrate, the interface lower region of an oxide film and the Si substrate, the interface lower region of an oxide film and the Si substrate, the region selected from a high density impurity region or two or more regions.
CONSTITUTION: After formation of an oxide film 2 and a SiN layer 3 on the surface of a p-type Si substrate 1, a photodiode pattern 4 is formed on the SiN layer 3. After the SiN layer has been removed using, the photodiode pattern 4 as a mask, B is ion-implanted, carbon is ion-implanted, and an ion-implanted region 5 is formed. When an oxide film 6 is formed after exfoliation of the photodiode pattern 4, B is diffused to the deep part of the Si substrate 1, a p+ region 8 is formed, carbon is related to heavy metal gettering, it is taken into the oxide film together with the heavy metal, and a gettering site layer 7 is formed. When carbon is ion-implanted on an Si-SiO2 interface 9 after removal of the SiN layer, gettering occurs again, and the heavy metal is taken into the oxide film, and the heavy metal can be reduced.

Inventors:

Shinji Uya

Application Number:

JP23926093A

Publication Date:

November 17, 2004

Filing Date:

September 01, 1993

Export Citation:

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