PURPOSE: To obtain a thin film manufacturing equipment having the degree of freedom in exposure which does not damage and modify a substrate, by radiating energy beam in the state wherein reactive gas is stuck on the substrate in solid phase or liquid phase by keeping the substrate at a temperature lower than or equal to a specific temperature.

CONSTITUTION: With a discharge equipment 6, the inside of a vacuum chamber 1 is vacuumized, and a substrate S is set at a temperature lower than or equal to a specified temperature. When reactive gas is introduced through a reactive gas feeding pipe 5, the reactive gas is set up or liquefied on the substrate. By opening sufficiently a variable orifice 20 and introducing a small amount of gas, almost all gas is condensed on the substrate. In a sample chamber 1b, only a small amount of the reactive gas molecules in vapor phase can exist, and the inside of the sample chamber 1b is considerably highly vacuumized, by continuing the exhausting with the exhausting equipment 6. When the substrate is irradiated with energy beam by opening a shutter 15 by a necessary amount, the reactive gas molecules in liquid phase or solid phase are made to react chemically, and a thin film composed of reaction products is formed on the substrate. Thereby, a manufacturing equipment for thin film can be obtained which can collectively expose a large area without contaminating the substrate.