MANUFACTURING METHOD FOR POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM

Title:

MANUFACTURING METHOD FOR POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM

Document Type and Number:

Japanese Patent JP2005005448

Kind Code:

A

Abstract:

To provide a method in which crystals having grain sizes of approximately 5 μm or more are grown in approximately the same direction by a single laser beam irradiation when a polycrystalline semiconductor thin-film is manufactured by a laser annealing method.

A foundation film containing a first thermal conduction layer and a second thermal conduction layer having a thermal conductivity lower than the first thermal conduction layer is formed between an insulating substrate and the semiconductor thin-film.

Inventors:

TSUNASAWA HIROSHI
NAKAYAMA JUNICHIRO
INUI TETSUYA

Application Number:

JP2003166541A

Publication Date:

January 06, 2005

Filing Date:

June 11, 2003

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01L21/20; H01L21/268; (IPC1-7): H01L21/20; H01L21/268

Attorney, Agent or Firm:

Keiichiro Saikyo
Takeshi Sugiyama
Minetarou Hirose

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