To provide a fine and highly reliable semiconductor device manufacturing method by reducing the undercut of a UBM film under a bump electrode.
The method includes: a process for forming a first opening H to communicate with an external terminal 5 in passivation films 6 covering the external terminal 5 on a substrate, and forming underbump metal films 7 on the passivation films 6 by contact with the external terminal 5 via the first opening H; a process for forming a resist 9 to form a second opening I on the external terminal 5 and on the underbump metal films 7; a process for forming a soldering film 10 to be the bump electrode 8 in the second opening I; a process for removing the resist 9; an oxidizing process for oxidizing the underbump metal films 7 with the soldering film 10 as a mask; and an etching process for removing the oxidized region in the underbump metal film 7 by etching.
HIGUCHI KAZUTO
UCHIDA MASAYUKI
ITO HISASHI
Iwa Saki Kokuni
Kawamata Sumio
Nakamura Tomoyuki
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
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