To provide a semiconductor device capable of forming a bump highly reliable in bonding by suppressing a side etching phenomenon in a base layer immediately beneath the bump, and to provide a semiconductor manufacturing method.
The semiconductor manufacturing method includes: a process for forming a plurality of projections on a substrate surface which comprises a pad 32 for forming the bump, and a surface wiring 33 and/or a pad 34 for wire bonding; a process for forming a bump base layer 39; a process for forming bump electrodes 40, 41 on the pad 32 for forming the bump via the bump base layer 39; and a process for dissolving and removing the bump base layer 39 with the electrode 40 as a mask. In the process for forming the projections 32, 33, 34; the pad 32 for forming the bump is formed to be higher than the other projections 33, 34. In the process for dissolving and removing the bump base layer 39, processing is performed by allowing the height of the level of a solution L to be lower than that of the pad 32 for forming the bump with respect to the substrate surface S.
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Ori Akira
Yasuo Iisaka
Next Patent: MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE