Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3588609
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To sufficiently keep the adherence of an insulating film and an electrode or wiring and to prevent drop of the dielectric constant of a capacitative element. SOLUTION: A metal layer 7A is formed on a third interlayer insulating film 5 where recessed parts 6 for forming capacitive elements are formed. The metal layer 7A is oxidized by washing. Thus, an adhesion layer 7 constituted of the sufficiently oxidized metal layer 7A is formed. Then, a Pt film 8A becoming the lower electrode of the capacitive element is formed on the adhesion layer 7.
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Inventors:
Akihiko Kamiya
Yasutoshi Okuno
Toshihiko Nagai
Yasutoshi Okuno
Toshihiko Nagai
Application Number:
JP2002260304A
Publication Date:
November 17, 2004
Filing Date:
September 05, 2002
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/28; H01L21/3205; H01L21/822; H01L21/8242; H01L23/52; H01L27/04; H01L27/108; (IPC1-7): H01L21/822; H01L21/28; H01L21/3205; H01L21/8242; H01L27/04; H01L27/108
Domestic Patent References:
| JP3165038A | ||||
| JP8186236A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Teshima Masaru
Atsushi Fujita
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Teshima Masaru
Atsushi Fujita