Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4037770
Kind Code:
B2
Abstract:
An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
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Inventors:
Katsuaki Natori
Koji Yamakawa
Osamu Arisumi
Hiroshi Itokawa
Keisuke Nakazawa
Hiroyuki Kanaya
Kumura Yoshinori
Koji Yamakawa
Osamu Arisumi
Hiroshi Itokawa
Keisuke Nakazawa
Hiroyuki Kanaya
Kumura Yoshinori
Application Number:
JP2003032426A
Publication Date:
January 23, 2008
Filing Date:
February 10, 2003
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/26; H01L21/28; C23C14/08; C23C14/58; C23C16/00; H01L21/00; H01L21/20; H01L21/768; H01L21/8234; H01L21/8246; H01L23/58; H01L27/105; H01L27/115; H01L27/11507; H01L29/417; H01L29/76; H01L31/062; H01L21/02
Domestic Patent References:
| JP11040748A | ||||
| JP2000228369A | ||||
| JP2002289556A | ||||
| JP2003013232A |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto