Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JP2022014593
Kind Code:
A
Abstract:
To improve the light emission distribution and the mounting property of a semiconductor light-emitting element.SOLUTION: A semiconductor light-emitting device includes: an active layer 26 provided in a first comb-teeth-shaped region on an n-type semiconductor layer 24; a p-type semiconductor layer 28 provided on the active layer 26; an n-side contact electrode 32 provided in a second comb-teeth-shaped region on the n-type semiconductor layer 24; a p-side contact electrode 30 provided in a third comb-teeth-shaped region on the p-type semiconductor layer 28; a protection layer 34 formed of a dielectric material and including a p-side pad opening 56 provided in a fourth comb-teeth-shaped region on the p-side contact electrode 30 and an n-side pad opening 58 provided in a fifth comb-teeth-shaped region on the n-side contact electrode 32; a p-side pad electrode 36 connecting to the p-side contact electrode 30 in the p-side pad opening 56; and an n-side pad electrode 38 connecting to the n-side contact electrode in the n-side pad opening 58.SELECTED DRAWING: Figure 1
Inventors:
INAZU TETSUHIKO
NIWA NORITAKA
NIWA NORITAKA
Application Number:
JP2020116985A
Publication Date:
January 20, 2022
Filing Date:
July 07, 2020
Export Citation:
Assignee:
NIKKISO CO LTD
International Classes:
H01L33/38; H01L21/28; H01L29/41; H01L33/10
Domestic Patent References:
| JP2020064955A | 2020-04-23 | |||
| JP2019106406A | 2019-06-27 | |||
| JP2006351575A | 2006-12-28 |
Attorney, Agent or Firm:
Morishita Kenki