Title:
MANUFACTURING METHOD OF SURFACE ACOUSTIC WAVE ELEMENT
Document Type and Number:
Japanese Patent JP2008118558
Kind Code:
A
Abstract:
To provide a manufacturing method with which a surface acoustic wave element can be reduced in height at a good yield and further, characteristics are also stabilized.
A manufacturing method of a surface acoustic wave element is characterized in that a piezoelectric mono-crystal wafer having rear-side roughness Ra of 0.15 m or preferably 0.01 m is prepared, an electrode pattern is formed on the wafer, and the wafer is made into chip and a rear side thereof is ground, so that the rear side can be made coarser than the rear-side roughness while keeping desired thickness.
Inventors:
ABE ATSUSHI
Application Number:
JP2006301936A
Publication Date:
May 22, 2008
Filing Date:
November 07, 2006
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
H03H3/08
Domestic Patent References:
JP2002280297A | 2002-09-27 | |||
JP2001332949A | 2001-11-30 | |||
JP2003017983A | 2003-01-17 | |||
JP2005333537A | 2005-12-02 | |||
JP2000124520A | 2000-04-28 |
Attorney, Agent or Firm:
Mikio Yoshimiya
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